FQD17N08L دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FQD17N08L	دانلود دیتاشیت

RoHS: true
Type: -
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FQD17N08LTM
Power Dissipation (Pd): -
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): -
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: TO-252
Manufacturer: onsemi
Series: QFET®
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: FQD1
detail: N-Channel 80V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount TO-252, (D-Pak)